Abstract
Photoluminescence (PL) properties of ZnO thin films on Si substrate with and without an indium tin oxide (ITO) buffer layer, prepared under different oxygen partial pressures in the sputtering gas, were studied. It was found that PL characteristics of ZnO thin films depend on oxygen partial pressure and substrate, and the PL peak in the ultraviolet region has a strong red-shift with increasing excitation intensity on the glass and Si substrates with the ITO buffer layer, and the PL intensity increases with the increasing measuring cycle. Enhanced luminescence efficiency of ZnO thin films on the substrates with ITO buffer layer measured at different cycles can be obtained by thermal annealing.
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