Abstract
A gettering procedure using phosphorus doped glass is shown to remove lithium-ion precipitation sites from p-type floating-zone (FZ) silicon. A model involving interaction between grown-in vacancies and oxidation-injected silicon interstitials is proposed to explain the gettering procedure. Examples of silicon lithium-drifted detectors fabricated on ungettered and gettered FZ silicon are presented. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
