LiTaO3 Thin Films Prepared by a Diol-Based Sol-Gel Process and Crystallized by Conventional and RTA Processes

Abstract

The LiTaO3 thin films were prepared by a diol-based sol-gel method and crystallized by conventional and RTA processes. Based on the results, the c-axis orientation of the films crystallized by the RTA process presented better crystallization than those crystallized in a conventional furnace. The remanent polarization (P r ) and the coercive field (Ec) of the films crystallized in a conventional furnace were about 2.4 μ C/cm2 and 87 kV/cm. On the contrary, for LiTaO 3 films crystallized by the RTA method, the remanent polarization (P r ) and the coercive field (Ec) were about 10.7 μC/cm2 and 45 kV/cm, respectively.