Abstract
The LiTaO3 thin films were prepared by a diol-based sol-gel method and crystallized by conventional and RTA processes. Based on the results, the c-axis orientation of the films crystallized by the RTA process presented better crystallization than those crystallized in a conventional furnace. The remanent polarization (P r ) and the coercive field (Ec) of the films crystallized in a conventional furnace were about 2.4 μ C/cm2 and 87 kV/cm. On the contrary, for LiTaO 3 films crystallized by the RTA method, the remanent polarization (P r ) and the coercive field (Ec) were about 10.7 μC/cm2 and 45 kV/cm, respectively.
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