Liquid-phase-deposited SiO2 on AlGaAs and its application

Abstract

The silicon dioxide (SiO2) on AlGaAs prepared by liquid phase deposition (LPD) at 40 °C has been explored. The LPD-SiO2 film deposition rate is about 67 nm h−1 for the first hour. The leakage current density is about 1.21 × 10−6 A cm−2 at 1 MV cm−1. The interface trap density (Dit) and the flat-band voltage shift (ΔVFB) are 1.28 × 1012 cm−2 eV−1 and 0.5 V, respectively. After rapid thermal annealing in the N2 ambient at 300 °C for 1 min, the leakage current density, Dit, and ΔVFB can be improved to 4.24 × 10−7 A cm−2 at 1 MV cm−1, 1.7 × 1011 cm−2 eV−1, and 0.2 V, respectively. Finally, this study demonstrates the application of the LPD-SiO2 film to the AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor.