Liquid phase epitaxy regrowth of two-dimensional electron gas on GaAs patterned by in situ meltback

Abstract

Selective in situ meltback of V-groove channels followed by liquid phase epitaxial regrowth of a modulation-doping AlGaAs layer is used to produce a two-dimensional electron gas on a patterned GaAs substrate. The in situ meltback patterning of the substrate forms channels made up of definite crystallographic planes. Characterization of the two-dimensional electron gas by magnetotransport measurements in a tilted magnetic field at 4.2 K confirms that the electron gas exists on all the planes that comprise the channels. Since the regrowth surface is exposed neither to air nor chemical etchants, this technique holds promise of producing high quality interfaces on patterned GaAs.