Liquid phase epitaxy of Si from Pb solutions

Abstract

Liquid phase epitaxy of Si was performed in a conventional tipping boat system in hydrogen atmosphere. Pure Pb was used as a solvent. Diffusion of Si in Pb solution was the rate determining step of the layer growth. The diffusion coefficient of Si in molten Pb at 987°C was determined to be 3.2×10 −5 cm 2 s −1. The surface of the grown layer showed wave-like morphology which might be caused by the etching and reconstruction of Si (1 1 1) surface in H 2 gas containing Pb vapor. Epitaxial layers having a thickness of up to about 4 μm were obtained. The unintentionally doped layers showed n-type electrical conductivity and room temperature resistivity higher than 15 Ω cm.