Abstract
Liquid phase epitaxy of GaAs from Bi melt was studied for growth temperatures between 670–750○C. The layers were characterized by Van der Pauw and photoluminescence measurements. All epitaxial layers were n-type and exhibit low compensation and electron mobilities up to 6×104 cm2/V s at 77 K. A gradual increase in the n-type doping was observed with growth temperature. Intentional doping of GaAs with Sn leads to a Sn distribution coefficient ∼60 times larger for the Bi melt in comparison to the Ga melt. Extremely low compensation of the Sn-doped layers (K≤0.1 for Nd=2.5×1017 cm−3) is obtained.
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