Liquid phase epitaxy of CdxHg1− xTe(0.5 < x < 1) and phase diagram determination

Abstract

Cd-rich Cd x Hg 1- x Te layers were grown onto CdTe and Cd 0.96Zn 0.04Te substrates by liquid phase epitaxy from a Te-rich solution in an open tube apparatus. Mercury vapor losses were carefully controlled in a specially designed sliding graphite reactor. Solid solution compositions between x = 0.5 and x = 1 were obtained. An expression for the segregation coefficient of cadmium as a function of x was obtained, viz.: k Cd = x(1.080- x)/0.080. The phase diagram of the ternary alloy in the Te corner was inspected and a method for determining the liquidus temperatures from the kinetics of epitaxial growth is presented; two isotherms T = 460°C and T = 480°C have been determined. The effect of the degree of supercooling on the layer morphology was studied.