Liquid phase epitaxial growth of GaxIn1−xP

Abstract

Single crystal epitaxial layers of Gaxln1−xP alloys have been grown by the steady-state liquid phase epitaxial growth technique on (111)B GaAs substrates. The crystal growth process has been studied in detail and the resultant epitaxial layers have been characterized with respect to their structural, electrical and optical properties. Epitaxial layers of good structural quality could be grown only in the composition range x = 0.48 to 0.53, where the lattice parameter is close to that of the GaAs substrate. The band gap of these crystals was in the range 1.86 – 1.92 eV as determined by optical absorption and photoluminescence measurements.