Year-end Sale % OFF 
Abstract
The possibility of the growth of InGaAlP on GaAs substrates by the liquid phase epitaxial growth technique has been investigated. When Al-pre-deposited GaAs substrates were used to charge Al and to grow InGaAlP on them, the quaternary alloys were grown partly on the GaAs (100) substrates at 788°C. The alloy compositions of the grown layers depended on the charged amounts of Al, which were in good agreement with the calculation of an InGaAlP phase diagram. It was possible to grow quaternary layers with Al contents up to 0.2 atomic fractions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
