Abstract
The epitaxial growth of lattice-matched InAsSb onto GaSb substrates from Sb solution by liquid phase epitaxy (LPE) has been investigated. Smooth, mirror-like, epitaxial layers of uniform thickness were obtained under close lattice matching conditions with no evidence of substrate erosion. Photoluminescence emission was observed from the material at room temperature in the wavelength region near 4.2 μm, which is of interest for the fabrication of optoelectronic components for use in infrared CO 2 sensors.
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