Abstract
The effect of small amounts of gallium on liquid metal embrittlement of model binary AlGa alloys containing 50–1000ppm2The unit ’ppm’ stands for ’parts per million by weight’ in this paper.2 Ga is studied. Ga segregation did not occur by annealing in the temperature range 300–600°C because of the high solid solution solubility of Ga in aluminium. Alkaline etching caused significant enrichment of Ga at the surface by dealloying. Diffusion of Ga from the surface into the grain boundaries caused liquid metal embrittlement of samples containing at least 250ppmGa. Segregated Ga dissolved back into aluminium by annealing for 1h at 600°C after etching, eliminating the grain boundary embrittlement.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
