Abstract
Crystalline , , and amorphous high- thin films have been deposited on substrates by metallorganic chemical vapor deposition (MOCVD) using two metal precursors [M=Dy, Sc; EDMDD=6-Ethyl-2,2-Di Methyl -3,5-Decane Dionato]. The precursors were evaluated in terms of efficiency and growth rate under various conditions, viz. vaporizer and susceptor temperatures, reactor pressure, injection rate, and injection delay between the two precursors. Amorphous films with nearly correct stoichiometry were deposited within the temperature range of 560–700°C. These amorphous films were smoother than the crystalline binary oxides and reached a density of around 85% of the bulk crystalline density. Amorphous structure and surface smoothness retained up to an annealing temperature as high as 950°C. The thickness of the interlayer did not vary with deposition temperature, but annealing at temperatures above 900°C increased the interlayer thickness. Electrical properties are promising; the dielectric constant of is much higher than that of the binary oxides and , and the leakage currents are very low compared to .
Published Version
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