Liquid gated three dimensional graphene network transistor

Abstract

In this paper, a novel three dimensional field effect transistor (FET) is presented. The transistor is made of graphene foam, which is a complex three dimensional network of single to double layer graphene that is immersed in the ionic liquid. The electrolytic double layer capacitance at the ionic liquid graphene interface provides all-around three dimensional liquid gating of the transistor. The high surface area of the graphene foam results in providing higher current carrying capacity than a two dimensional graphene transistor. Moreover, the nanometer thick electrolytic double layer formed at the high surface area liquid-graphene interface results in large gate capacitance that allows for low voltage operation. Owing to its all carbonaceous form and all around liquid gating, the presented three dimensional graphene transistor may lead the way for real electronic interfaces with the biological world and for biochemical sensing.