Digital, analog, and mixed signal IC and system-on-chip of dual carrier field effect transistor and three dimensional field effect transistor

Abstract

Theoretical studies of digital, analog and mixed signal ICs and systems-on-a-chip using dual carrier field effect transistors and three dimensional field effect transistors are presented. It is shown that the effective channel length of dual carrier field effect transistors and three dimensional field effect transistors can be designed and fabricated to have effective channel length of 5-20 nm by mature semiconductor technology for line widths greater than 130 nm.