Abstract

The authors report the measurement of the laser linewidth, wavelength tunability, and generation of microwave frequencies between individually addressable elements of a vertical-cavity GaAs quantum-well surface-emitting laser diode array (lasing in the wavelength range 850-865 nm). Using heterodyne techniques, the authors obtain a deconvolved 65 MHz laser linewidth from the 109 MHz beat signal. The laser linewidth corresponds to a semiconductor laser linewidth enhancement factor alpha =5.7, which is in excellent agreement with that obtained independently from optical gain measurements and corresponding calculated refractive index changes. The authors measured heterodyne beat frequencies of 2-20 GHz. The bandwidth was limited by the microwave amplifiers. A simple calculation shows that a tuning range of 65 MHz to 3 THz can be achieved. >

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