Abstract
The authors formulate a theory of indirect excitons in GaP under uniaxial stress including the valence-band degeneracy and the camel's back structure of the conduction band. In the high-stress limit they separate relative and centre-of-mass motion and obtain analytic expressions for the exciton dispersion, which are then used to calculate the exciton lineshapes. Comparison with experimental line shapes from wavelength-modulated spectra yields energy band parameters in particular for the lowest conduction bands. In addition, they analyse the strength of different phonon replicas to determine the relative magnitude of the electron-phonon coupling to the zone-boundary phonons assisting the indirect-gap absorption.
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