Abstract
We study the pressure dependence of nitrogen bound excitons in GaP:N below and beyond the ionization pressure of these excitons. We find that the ionization pressure of these excitons (the pressure at which the electron of these nitrogen bound excitons becomes resonant with the X conduction band) increases with the exciton binding energy. Last, there is a similar behavior between GaP:N and GaPN alloys, which indicates a significant contribution of the X states to the conduction band of the GaPN alloy. This contribution, which the experiment shows to increase with pressure, probably decreases with an increase of the nitrogen content in the GaPN alloys.
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