Abstract
Abstract We present a theory to describe the line shape of luminescence transitions of free carriers to bound states in direct-gap semiconductors under weak external electric fields. The electron distribution due to uniform drift motion superimposed on thermal motion, accounts well for experimental data on GaAs. The theory reduces to Eagles' formula for vanishing fields.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call