Linearity and RF Power Handling on Capacitive RF MEMS Switches

Abstract

Linearity characteristics of capacitive tuners under large radio frequency (RF) power have become an important issue for today’s cellphone industry. The use of these devices as antenna tuners has become critically important due to the RF spectrum opening in the low-frequency range. Capacitive tuners connected directly to the antenna to change the RF voltage/current pattern and tune lower frequencies are subjected to suffer large voltage swings, especially in the isolation state or minimum capacitance. In this article, we analyze the effects of the large RF power or equivalent rms voltage to capacitive micro-electromechanical systems (MEMS) switches. The theoretical analysis combined with Coventor MEMS+ simulations will allow us to study the capacitance change and MEMS mechanical frequency response. This article evaluates two types of measurement setups to investigate the RF power effects on nominal capacitance and mechanical frequency response. Measurements up to 6 W were completed with two capacitive MEMS tuner products, confirming the modeling predictions and demonstrating the robustness of this technology under large RF power or voltage swings.