Abstract

Up-converted heterostructures with a Mn-doped GaN intermediate band photodetection layer and an InGaN/GaN multiple quantum well (MQW) luminescence layer grown by metal-organic vapor-phase epitaxy are demonstrated. The up-converters exhibit a significant up-converted photoluminescence (UPL) signal. Power-dependent UPL and spectral responses indicate that the UPL emission is due to photo-carrier injection from the Mn-doped GaN layer into InGaN/GaN MQWs. Photons convert from 2.54 to 2.99 eV via a single-photon absorption process to exhibit a linear up-conversion photon energy of ~450 meV without applying bias voltage. Therefore, the up-conversion process could be interpreted within the uncomplicated energy level model.

Highlights

  • Various attempts have been made to improve the efficiency of solar cells by exploiting intermediate band absorption and up-conversion effects

  • Up-converted heterostructures with a Mn-doped GaN intermediate band photodetection layer and an InGaN/GaN multiple quantum well (MQW) luminescence layer grown by metal-organic vaporphase epitaxy are demonstrated

  • Power-dependent upconverted photoluminescence (UPL) and spectral responses indicate that the UPL emission is due to photo-carrier injection from the Mn-doped GaN layer into InGaN/GaN MQWs

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Summary

Introduction

Various attempts have been made to improve the efficiency of solar cells by exploiting intermediate band absorption and up-conversion effects These processes transform additional low-energy photons in the solar spectrum into high-energy ones [1,2,3,4,5,6]. The up-conversion photoluminescence (UPL) phenomenon requires a mechanism that up-converts electrons and/or holes from the low- to the high-band-gap material. The up-converters consisted of Mn-doped GaN intermediate band materials for photodetection, and InGaN/GaN multiple quantum well (MQW) structures for radiative luminescence. The UPL was mainly attributed to the fact that low-energy photons generated electrons from the Mn-doped GaN layer. These photons were injected into the InGaN/GaN MQWs, leading to the UPL.

Device fabrication and experiment methods
Results and discussion
Conclusions

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