Linear magnetoresistance in textured Bi1−xSbx ribbons prepared by melt spinning method

Abstract

Bi1−xSbx alloys with large linear magnetoresistance (LMR) are a promising candidate for magneto-electronic devices. In this work, the highly (00l) textured Bi1−xSbx (0 ≤ x ≤ 0.04) ribbons with nano-sized lamellar grains were prepared by the melt spinning method and their magneto-transport properties were investigated. All the ribbons exhibit obvious LMR features, and the crossover magnetic field (Bc) from quadratic to linear magnetoresistance is remarkably reduced by Sb doping. Compared with the Bc of the x = 0 ribbon (about 1.28 T at 300 K), the Bc values of the Sb doped ribbons are significantly smaller, especially for the Bc of the x = 0.03 ribbon (only about 0.53 T at 300 K). Besides, for the x = 0.03 ribbon, the parameter Φ (MR%(B = 1 T)/Bc) relevant to LMR performance reaches up to 52 at 300 K. Analysis of the LMR reveals that Sb doping makes the LMR mechanism transition from recombination of carriers for x = 0 ribbon to spatial fluctuation of carrier mobility governed LMR for x = 0.03 ribbon. This work is instructive to understand the transport features of textured Bi1−xSbx ribbons.