Linear-in-frequency optical conductivity over a broad range in the three-dimensional Dirac semimetal candidate Ir2In8Se

Abstract

The optical conductivity of the new Dirac semimetal candidate ${\mathrm{Ir}}_{2}{\mathrm{In}}_{8}\mathrm{Se}$ is measured in a frequency range from 40 to 30 000 ${\mathrm{cm}}^{\ensuremath{-}1}$ at temperatures from 300 K down to 10 K. The measurement reveals that the compound is a low carrier density metal. We find that the real part of the conductivity ${\ensuremath{\sigma}}_{1}(\ensuremath{\omega})$ is linear in frequency over a broad range from 500 to 4000 ${\mathrm{cm}}^{\ensuremath{-}1}$ at 300 K and varies slightly with cooling. This linearity strongly suggests the presence of three-dimensional linear electronic bands with band crossings near the Fermi level. Band-structure calculations indicate the presence of type-II Dirac points. By comparing our data with the optical conductivity computed from the band structure, we conclude that the observed linear dependence mainly originates from the Dirac cones and the transition between the Dirac cones and the next lower bands. In addition, a weak energy gap feature is resolved below the charge density wave phase transition temperature in the reflectivity spectra. An enhanced structure arising from imperfect Fermi surface nesting is identified in the electronic susceptibility function, suggesting a Fermi surface nesting driven instability.