Abstract
We demonstrated a novel method to grow InGaAsP linear graded-index separate confinement heterostructure (GRINSCH) by ramping the growth temperature in the metallorganic chemical vapor deposition system. From secondary ion mass spectroscopy and photoluminescence analysis, the composition of linearly graded layer is well in control. By introducing this GRINSCH InGaAsP structure, SMQW ridge waveguide laser diodes with a back-facet high-reflection coating exhibit a low threshold current of 6.5 mA at 20°C, a high light output power of 20 mW at 80 mA, and a high slope efficiency of , also showing potential for high-temperature, continuous-wave operation up to 95°C. The longitudinal mode oscillates at at 20°C and the of red-shift rate in wavelength.
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