Abstract
A model for small-signal dynamic self-heating is derived for the general case of a two-port device and then specialized to the case of an SOI MOSFET. The model is fitted to measured data for an SOI MOSFET and shown to accurately describe the frequency dependence of the self-heating. For this device, three time constants of 0.25 mu s, 17 ns, and 90 ps adequately characterize the thermal response, showing that self-heating effects are active over a very wide frequency range. >
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