Abstract
Al x Ga 1− x N/GaN heterostructures (0≤ x≤1) were deposited on (0 0 0 1)-sapphire by low-pressure (20 Torr) organometallic vapor phase epitaxy utilizing a range of group-III precursor and NH 3 flow rates and a deposition temperature of 1050 °C. The Al-mole fraction of Al x Ga 1− x N layers was controlled by variations in the molar flows of triethylgallium ( f TEG) and trimethylaluminum ( f TMA). Characterization by X-ray diffraction confirmed that increasing the f TMA/ f TEG ratio during deposition resulted in increased Al-mole fraction of Al x Ga 1− x N layers. A linear relationship between the experimental Al-mole fraction of Al x Ga 1− x N layers and the group-III precursor flows was obtained if a correction factor γ was introduced such that x= γf TMA/( γf TMA+ f TEG). This correction factor was found to be independent of group-III precursor flows but dependent on NH 3 partial pressure. The value of γ for these experiments decreased from 1.4 to 1.0 when the NH 3 partial pressure was increased from 0.8 to 16.0 Torr during Al x Ga 1− x N deposition. The growth rate of Al x Ga 1− x N layers was found to be a linear combination of the independent AlN and GaN growth rates when equivalent f TMA and f TEG were utilized under the same deposition conditions.
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