Abstract
Considering the strong built-in electric field (BEF) effects due tothe spontaneous and piezoelectric polarizations, the intersubbandoptical absorptions and refractive index changes for anInxGa1−xN/AlyGa1−yN strained single quantum well arestudied theoretically within the framework of the density matrixmethod and effective-mass approximation. The linear, third-ordernonlinear and total absorption coefficients and refractive indexchanges are calculated as a function of the incident opticalintensity and photon energy. Our results show that both the incidentoptical intensity and the strong BEF have great influence on thetotal absorptions and refractive index changes. The results aresignificant for designing some important photodetectors and thephotonic crystal devices with adjustable photonic band structures.
Published Version
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