Abstract
The stimulated Raman spectrum of the ν 1 band of SiH 4 has been recorded at 0.4 and 1.0 bar pressures and room temperature. Line mixing of the fine structure components of this spectrum was taken into account in a calculated profile by considering coupling between the main transitions and using a simple model (strong collision model, SCM) for the relaxation matrix.
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More From: Journal of Quantitative Spectroscopy and Radiative Transfer
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