Line defect induced conductance suppression in graphene nanojunction

Abstract

Abstract Line defect induced conductance suppression in graphene nanojunction is investigated by means of Landauer–Butikker formula and the nonequilibrium Green׳s function technique. With the increase of the longitudinal size of the device region, the conductance value decreases and tends to form two conductance valleys. Then we prove that the line defect can lead to localize states in the device region, which contributes to conductance valley at the point far away from Dirac point. And the zero conductance at the Dirac point is associated with the edge state localized at the zigzag-edged shoulder of the nanojunctions. The staggered potential can change energy spectrum structure of the device region, and produce strong conductance suppression. The line defect can efficiently enhance the conductance suppression, which can be utilized to realize the electron transport manipulation.