Abstract
Electron transport properties in an armchair graphene nanoribbon are theoretically investigated by considering the presence of line defect. It is found that the line defect causes the abundant Fano effects and bound state in continuum (BIC) in the electron transport process, which are tightly dependent on the width of the nanoribbon. By plotting the spectra of the density of electron states of the line defect, we see that the line defect induces some localized quantum states around the Dirac point and that the different localizations of these states lead to these two kinds of transport results. Next, the Fano effect and BIC phenomenon are detailedly described via the analysis about the influence of the structure parameters. According to the numerical results, we propose such a structure to be a promising candidate for graphene nanoswitch.PACS81.05.Uw, 71.55.-i, 73.23.-b, 73.25.+i
Highlights
Since 2004, the monolayer graphene has been successfully realized in experiment [1,2]
When the graphene with line defect is tailored into an armchair GNRs (AGNRs), one would find its various configurations
If one edge of the AGNR is perpendicular to the growth direction of the line defect and its profile is assumed to be unchanged, we will possess four different configurations, as shown in Figure 1a,b and Figure 2a,b
Summary
Since 2004, the monolayer graphene has been successfully realized in experiment [1,2]. Graphene can be tailored into various edge nanoribbons Their semiconducting properties with a tunable band gap dependent on the structural size and geometry make them good candidates for the electric and spintronic devices [5]. Due to this reason, the graphene nanoribbons (GNRs) become of particular interest. Using a tight-binding model calculation, Bahamon et al have observed the metallic characteristics and Fabry-P’erot oscillation phenomena in graphene line defects [32] After these works, researchers dedicated themselves to the discussion about the electronic and magnetic properties of graphene with a topological line defect; the line defect-based electronics has been gradually established [33,34,35,36]. A valley filtering device based on a finite length line defect in graphene was proposed
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