Abstract
The criteria are formulated, which allow determination of the sets of electrophysical and design parameters of the diode temperature sensors (DTSs) providing either maximal extent of the temperature response curve (TRC) or the maximal sensitivity of DTSs. New method for a self-consistent device optimization is developed in the framework of model of the diffusion current flow through an abrupt asymmetric p–n junction, the ideality factor of which is assumed to be equal to unity. For Si-, GaAs-, and Ge-based DTSs with n +–p and p +–n junctions, the limiting TRCs and temperature dependencies of the sensitivity have been calculated. The experimentally measured metrology characteristics of DTSs have been shown to be within the range restricted by the established limiting characteristics.
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