Limited reaction processing: Growth of III-V epitaxial layers by rapid thermal metalorganic chemical vapor deposition

Abstract

We have demonstrated a new technique for III-V epitaxial layer growth combining rapid thermal processing and metalorganic chemical vapor deposition. This technique yields enhanced layer thickness control and abrupt interfaces while maintaining a high growth rate (≥10 Å/s). Multilayer structures have been grown with smooth, featureless surfaces and good electrical quality (Nd=2×1016 cm−3, μn=3000 cm2/V s) using trimethylarsenic and trimethylgallium.