Abstract
In this work, the gain characteristics of the GeSn alloy are systematically investigated with effective mass approximation theory, and the potential of bulk GeSn in the application of a high-performance laser is discussed. The gain could not be enhanced persistently as the mole fraction of Sn continuously increases and becomes negative as the Sn fraction beyond 18%. An Sn fraction dependent doping scheme is proposed to effectively reduce the threshold injected carrier density to the lowest of 1.10×1018 cm-3. The optimum doping type varies from n-type to p-type as the Sn fraction increases with the conversion fraction of 10%. With doping optimization, the lowest threshold current density of bulk GeSn based laser is predicted to be 1.225 kA/cm2 for a designed n-Si0.157Ge0.643Sn0.200/p-Ge0.84Sn0.16/p-Si0.157Ge0.643Sn0.200 double heterostructure laser, indicating the inadequacy of bulk GeSn alloy of being the gain material for a high-performance laser.
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