The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy

Abstract

Epitaxial breakdown phenomenon for Ge1-xSnx thin film with Sn fraction of less than 6 % during low-temperature molecular beam epitaxy has been reported [J. Appl. Phys. 97, 044904, 2005]. However more Sn incorporation is required for direct bandgap transition of GeSn alloy, which has much attractive for GeSn optoelectronic devices. In this work, moderate Sn fraction Ge1-xSnx (8 %∼15.3 %), as well as composition-stepped multiple GeSn layers, grown on Ge (001) substrate by molecular beam epitaxy at 120–150 ℃ are investigated. Epitaxy breakdown occurs for the Ge1-xSnx epilayer with Sn fraction of about 8 % and 10 %, even with low Sn fraction buffer layers, in which the film delaminates into a fully compressively strained bottom layer with dislocation free and a fully relaxed top layer spontaneously. Once the epitaxy breakdown occurs, the amorphous columnar structures extend into the following deposited GeSn epilayer, regardless of Sn fraction. While, the strain in the whole Ge1-xSnx epilayer with Sn fraction of 15.3 % is directly released during growth by generation of misfit and threading dislocations or agglomeration of islands. Those results indicate that there are three growth modes including fully compressive strained thin GeSn epilayer, epitaxial breakdown induced self-delamination of GeSn layer with moderate Sn fraction, and strain relaxed Ge1-xSnx epilayer with high Sn fraction of above 15 %. The complex behavior can be attributed to the competition between kinetic roughening and strain- driven GeSn agglomeration or generation of dislocations. The understanding of the growth behavior is helpful for controlling crystal quality of GeSn thin films for their application in optoelectronic devices.