Abstract
Lithium Indium Selenide (LiInSe2) is being developed for use as a room temperature semiconductor detector for thermal neutrons The material has been studied for a number of applications including nonlinear optics such as parametric oscillators, as anode material for lithium ion batteries, piezoelectrics, as a scintillation detector material and as a semiconductor detector material. The recent advances of the crystal growth, material processing and detector fabrication have led to semiconductor neutron detectors with up to 100 mm2 active area. The thermal neutron detection sensitivity and gamma rejection ratio (GRR) are comparable to 10atm, He-3 tubes of similar size. Synthesis, crystal growth, detector fabrication, and characterization are discussed.
Highlights
Semiconductors with one or more constituent neutron sensitive isotopes have potential for compact, efficient thermal neutron detection [1]
We report on LiInSe2 semiconductors for thermal neutron as well as its capability for pulse height gamma-ray rejection
The LiInSe2 was synthesized in two steps: first by reaction of lithium metal with indium metal in the melt at 1,000◦ C contained in a pBN crucible, which is sealed under vacuum in a larger quartz ampoule along with selenium beads at the bottom of the ampoule
Summary
Semiconductors with one or more constituent neutron sensitive isotopes have potential for compact, efficient thermal neutron detection [1]. Reactions that yield charged particles with ranges much shorter than the semiconductor dimensions are desired for neutron detection. The detection efficiency of semiconductor devices that incorporate thermal neutron sensitive isotopes as a constituent would not be limited by the short range of charged particle reaction products in the converter layer. We report on LiInSe2 semiconductors for thermal neutron as well as its capability for pulse height gamma-ray rejection. The gammaray response to 60Co source was measured and the results of the neutron/gamma-ray response are reported
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