Abstract
When a thinner absorber mask is applied to extreme ultraviolet (EUV) lithography for chip production, it becomes essential to a introduce light-shield border in order to suppress the leakage of EUV light from the adjacent exposure shots. In this paper, we evaluate the leakage of both EUV and out-of-band from light-shield border and clarify the dependence of lithographic performance on light-shield border structure using a small field exposure tool with/without spectral purify filter (SPF). Then we evaluate the lithographic performance of a thin absorber EUV mask with light-shield border of the etched multilayer type and demonstrate the merit of its structure using a full-field scanner operating under the currently employed condition of EUV source in which SPF is not installed.
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