Abstract
The creation kinetics of light-induced defects (LIDs) in intrinsic a-Si:H are found to be quite independent of exposure temperature, T e, between 4.2 and 300 K and exposure light intensity. The findings suggest that LID creation is a very robust process. The creation efficiency of LIDs varies by a factor 2.5 with T e and has a broad minimum between 80 and 200 K. 10 5 V/cm electric fields at 4.2 K decrease the creation efficiency by 30%. A spectral relaxation of subgap absorption due to LIDs created below 200 K is found above 200 K prior to the anneal of LIDs.
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