Abstract
In this study we have investigated the temperature dependence of light-induced conductivity changes in phosphorus-doped hydrogenated amorphous silicon(a-Si:H). At certain temperatures, the transition of the dark conductivity change after illumination from normal to abnormal(inverse) Staebler-Wronski(SW) effects have been observed. This transition temperature decreases with increasing doping concentration. On the other hand, the light-induced photoconductivity change shows the normal SW effects in all temperatures but the magnitude of change decreases drastically above transition temperature. Possible mechanism for these effects is discussed.
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