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Abstract
Light-induced changes in the conductivity, photoconductivity and activation energy of dark conductivity (Staebler-Wronski effect) were studied in hydrogenated amorphous silicon films prepared in cascaded glow discharge reactors. It was found that the films grown upstream are prone to such effects (although not as strongly as reported in the literature), whereas the films grown downstream are almost unaffected even after prolonged illumination and are stable in light. These changes were investigated further by applying an external electric field during illumination. It was found that under these conditions the change in conductivity decreased as the electric field gradually increased and vanished when the field approached 10 4–10 5 V cm -1 which is comparable with the built-in field in a solar cell.
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