Abstract
Resonant inelastic light scattering experiments have been used extensively for the investigation and characterization of semiconductor heterostructures and superlattices. Allowed phonon Raman scattering acts as a nondestructive tool with high spatial resolution to get information on composition, surface orientation, structure, and strain of thin grown layers. As an example we discuss the growth of Ge on (110)GaAs. Forbidden LO-phonon scattering in polar semiconductors is used to measure barrier heights at surfaces or interfaces. This method has also been applied to study band bending at internal surfaces. Resonant electronic light scattering measures directly the elementary excitations of free carriers which may exist in semiconductor heterostructures and superlattices. The 2D nature of the carriers is demonstrated by the separation of inter- and intrasubband excitations.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
