Abstract
Resonant inelastic light scattering is used as a versatile tool for the investigation of semiconductor surfaces and interfaces. Phonon scattering spectra yield direct information on structure, surface orientation, and composition of semiconductor layers as thin as a few monolayers. “Forbidden” electric-field induced LO-phonon scattering in polar semiconductors leads to information on surface or interface barrier heights. The formation of semiconductor heterostructures is studied “in situ” for the GaAs/Ge system. Electronic Raman scattering is used widely to investigate subband energies and carrier concentrations in space charge layers at semiconductor interfaces as well as in superlattices.
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