Abstract
Abstract It is proposed to review modern theoretical results related to the influence of point (impurities, vacancies, etc.) and linear (dislocation) defects on the intensity of the elastic and inelastic light scattering in ferroelectrics and other crystals near the second-order phase transition temperature. Three main types of systems of randomly distributed frozen-in point defects are treated: (i) the randomly oriented polar defects; (ii) the polarized (correlated with respect to the dipolar moments orientation) defects; (iii) the charged defects in ferroelectrics.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
