Abstract
In observing 0.1 µ m in size light point defects (LPDs) in Czochralski-grown silicon wafers in hydrogen annealing by scatterometer (Surfscan\\circR SP1 and Surfscan 6200 from Tencor Instrument), we have found that the hydrogen annealed wafer has fewer defects on the surface, compared with a polished wafer. Assuming that LPDs are equal to Crystal Originated Particles (COPs) which are oxygen precipitates and/or vacancy-type defects, LPDs can therefore be reduced by evaporating oxygen from the surface, and migrating silicon-atoms onto the surface during hydrogen annealing at 1200° C for 1 h.
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