Abstract
Ultrafast, high-intensity light-matter interactions lead to optical-field-driven photocurrents with an attosecond-level temporal response. These photocurrents can be used to detect the carrier-envelope-phase (CEP) of short optical pulses, and enable optical-frequency, petahertz (PHz) electronics for high-speed information processing. Despite recent reports on optical-field-driven photocurrents in various nanoscale solid-state materials, little has been done in examining the large-scale electronic integration of these devices to improve their functionality and compactness. In this work, we demonstrate enhanced, on-chip CEP detection via optical-field-driven photocurrents in a monolithic array of electrically-connected plasmonic bow-tie nanoantennas that are contained within an area of hundreds of square microns. The technique is scalable and could potentially be used for shot-to-shot CEP tagging applications requiring orders-of-magnitude less pulse energy compared to alternative ionization-based techniques. Our results open avenues for compact time-domain, on-chip CEP detection, and inform the development of integrated circuits for PHz electronics as well as integrated platforms for attosecond and strong-field science.
Highlights
Ultrafast, high-intensity light-matter interactions lead to optical-field-driven photocurrents with an attosecond-level temporal response
Considering that about 11 bow-tie pairs were exposed within the full width at half maximum (FWHM) of the beam spot, this corresponds to roughly 1.3 pA/bow-tie, which is similar to the results in ref. 13, and constitutes more than one order of magnitude increase in the total CEP-sensitive current compared with similar single-nanotriangle emitters we have reported on in prior work[15,19]
Our findings emphasize the need for large-scale arrays such as those investigated here to further improve the overall signal-to-noise ratio (SNR) and achieve sufficient photocurrents for shot-to-shot CEP tagging
Summary
High-intensity light-matter interactions lead to optical-field-driven photocurrents with an attosecond-level temporal response. The combination of nano-optical structures with intense, few-cycle laser sources has led to a new class of solid-state petahertz electronic devices with promising applications in time-domain metrology as well as information processing[1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19] These petahertz devices rely on the attosecond-level temporal response of optical-field-driven photocurrents that result from the interaction of strong electric fields (tens of GV/m) with nanostructured materials[2,3,4,5,6,8,9,10,13,15,16,17,19,20,21,22]
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