Abstract
Crystallographic sites of muons and pions are determined using channelling effects of the charged decay particles. By means of time differential techniques at pulsed beams the fate of the particles in the crystal is followed by measuring the channelling profile as a function of time between implantation and particle decay. With negative muons μ --SR experiments were performed in Si between room temperature and 6 K. The muon spin precession in an applied magnetic field of 0.04 T disappeared below 20 K. A zero-field measurement at 6 K revealed a μ - spin precession frequency of 650 MHz. The muonic atom represents an aluminium acceptor in the silicon matrix, its electronic state is responsible for the μSR signal. A possible influence of the γ recoil produced by the X-ray cascade is discussed.
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