μ− SR in semiconductorsSR in semiconductors

Abstract

μ− SR experiments have been performed on Si between room temperature and 6 K. The amplitude of the muon spin precession signal in an applied magnetic field of 0.04 T decreased below 30 K. A zero-field measurement at 6 K revealed a μ− spin precession frequency of 650 MHz. The muonic atom represents an aluminium acceptor in the silicon matrix, its electronic state is responsible for the μSR signal. A possible influence of the γ recoil produced by the X-ray cascade is discussed.