Light-induced Stability of Layered Amorphous Hydrogenated Silicon Grown with Alternating Substrate Temperature

Abstract

AbstractWe present the results of studies on the light-induced stability of undoped layered hydrogenated amorphous silicon films grown with alternating substrate temperature between optimal and non optimal temperatures for device-quality films. Compared to the single layer films grown at optimal substrate temperature, the layered films show improved stability in the lightinduced state. Under intense light illumination of 3 W/cm2, the steady-state defect density of the layered film reached a saturation of 2×1016 cm−3, while the single layer film saturates at about 6×1016 cm−3. It is found that in the completely degraded state the photoconductivity in the layered film is also improved by a factor of two compared to the single layer film.