Abstract
Undoped hydrogenated amorphous silicon films have been grown in multilayers with alternating substrate temperature between optimal and nonoptimal temperature for device-quality films. Compared to the single layer films grown at optimal substrate temperature, the multilayer films show improved stability in the light-induced state. Under intense light illumination of 3 W/cm2, the steady-state defect density of the layered film reaches a saturation of 2×1016 cm−3, while the single layer film saturates at 6×1016 cm−3. It is found that in the completely degraded state, the photoconductivity in the multilayer film is also improved by a factor of 3 compared to the single layer film.
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