Abstract
In this letter, we present a novel invisible bilayer ZnSnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> /ZnSnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> memristor for photo sensing. The device exhibits excellent photo sensing features such as a highly stable electrical set and optical reset endurances at least 2200 cycles for blue light and 1800 cycles for green and red light without any deterioration. Moreover, the device shows excellent retention (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> s) at 90 °C without disruption and high transmittance of about 85%. These outstanding device properties would allow us to create either an optical to an electronic memory device or an always-on continuous measurement optoelectronic sensor.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
