Abstract
In this report we have investigated the light sensing behavior and also discussed the induced charge transport phenomena through the junction made by aluminium and hydrothermally derived zinc-sulfide (ZnS). In this regards the structural, optical and electrical characterization of ZnS was performed well. The optical band gap energy (=3.68 eV) estimated from optical spectra and room temperature conductivity (0.49 × 10−6 S cm−1) measured from current–voltage characteristic explores the inorganic semiconductor behavior of the synthesized material. Depending upon the work function, aluminium (=4.4 eV) was preferred as metal contact to develop a potential barrier within the junction to study the underneath mechanism of charge transport through metal/inorganic-semiconductor interface. Moreover we have fabricated the sandwich structure ITO/ZnS/Al junction to study the effect of incident light on charge transport phenomena and demonstrated the potential applicability of the synthesized material to over crown the research on inorganic nano-semiconductor. The everbound charge transport phenomena within the device was analyzed by thermoionic emission theory. In searching its performance within light sensing electronic device we have deliberated the mobility-lifetime product, diffusion length and density of states (DOS) near Fermi level very aptly.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
